डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1365 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1365
DESCRIPTION ·High Collector-Base Voltage
: V(BR)CBO= 800V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2A ·High Speed S |
INCHANGE |
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2SD1367 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1360 | Silicon NPN Transistor | Toshiba |
|
2SD1368 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1366 | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1366A | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1363 | Silicon NPN Transistor | Toshiba |
|
2SD1362 | Silicon NPN Transistor | Toshiba |
|
2SD1361 | Silicon NPN Transistor | Toshiba |
|
2SD1361 | NPN Transistor | INCHANGE |
|
2SD1360 | NPN Transistor | INCHANGE |
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