2SD1355 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD1355 | Silicon NPN Transistor :
SILICON NPN TRIPLE DIFFUSED TYPE
)
POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax.
. Complementary to 2SB9 |
 Toshiba |
|
| 2SD1355 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1355
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min) ·Com |
 INCHANGE |
शेयर लिंक :
[1]
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