डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1352 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 ·Minimum Lot-to-Lot variations for robust device
per |
INCHANGE |
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2SD1351 | NPN Complementary Silicon Power Transistors | Thinki Semiconductor |
|
2SD1354 | Silicon NPN Transistor | Toshiba |
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2SD1351 | Silicon NPN Power Transistors | Inchange Semiconductor |
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2SD1350 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD1350A | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD1353 | Silicon NPN Transistor | Toshiba |
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2SD1352 | NPN Transistor | INCHANGE |
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2SD1358 | Silicon NPN Transistor | Toshiba |
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2SD1358 | NPN Transistor | INCHANGE |
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2SD1357 | NPN Transistor | INCHANGE |
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