| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon NPN Transistor eakdown Voltage IC= 30mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V |
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