डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1336 | Power Transistor isc Silicon NPN Darlington Power Transistor
2SD1336
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain
: hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching · |
Inchange Semiconductor |
|
2SD1330 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD1338 | Silicon NPN Transistor | Inchange Semiconductor |
|
2SD1336 | Power Transistor | Inchange Semiconductor |
|
2SD133 | NPN Transistor | INCHANGE |
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