2SD133 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.4 Unit: mm 6.9±0.1 1.5 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 2.5±0.1 1.0 1.0 q

isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching ·

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and relia