2SD130 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) ·Minimum Lot-to-Lot variations

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC=

Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 5.0±0.2 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Colle

ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙ High emitter-base voltage

Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification s Features q Zener diode built in. q Mini type package, allowing downsizing of the equipment and automatic insertion through

2SD1306 Silicon NPN Epitaxial ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier, Muting Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1306 Absolute Maximum Ratings (Ta = 2