डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1294 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Included Avalanche Diode-
: VZ= 60±15V ·High DC Current Gain
: hFE= 2000~20000@ IC= 0.5A, VCE= 5V ·Minimum Lot-to-Lot variations for robust device
p |
INCHANGE |
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2SD1294 | NPN Transistor |
Toshiba Semiconductor |
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2SD1294 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1294
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Wide area of safe operation ·High DC current gain ·Darlington |
SavantIC |
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