डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1245 | Silicon NPN Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robu |
Inchange Semiconductor |
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2SD1249 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD1244 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD1246 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1247 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1243 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1245 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SD1249 | Silicon NPN Transistor | Kexin |
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2SD1248 | Power Transistor | Inchange Semiconductor |
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2SD1249A | Silicon NPN Transistor | Kexin |
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2SD1249A | Silicon NPN Transistor | Panasonic Semiconductor |
www.DataSheet.in | 2017 | संपर्क |