डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1233 | Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations |
Inchange Semiconductor |
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2SD1233 | Power Transistor | Inchange Semiconductor |
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2SD1238 | PNP / NPN Epitaxial Planar Silicon Transistors | Sanyo |
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2SD1238L | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1237L | SILICON POWER TRANSISTOR | SavantIC |
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2SD1237L | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1236 | PNP / NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1236 | NPN Transistor | INCHANGE |
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2SD1235 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1230 | Silicon NPN Darlington Power Transistor | INCHANGE |
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2SD1230 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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