डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1187 | NPN TRANSISTOR |
Toshiba Semiconductor |
|
2SD1187 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1187
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage-
: VCE(sa |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |