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2SD1163A | NPN TRANSISTOR 2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 2 |
Hitachi Semiconductor |
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2SD1163A | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
p |
INCHANGE |
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2SD1163A | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
·Wit
www.datasheet4u.com
DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horiz |
SavantIC |
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2SD1163A | Silicon NPN Transistor To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitach |
Renesas |
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2SD1163A | NPN Silicon Epitaxial Power Transistor 2SD1163/2SD1163A
®
Pb Free Plating Product
2SD1163/2SD1163A
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications * Low collector saturation voltage TV horizonta |
Thinki Semiconductor |
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