डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1158 | NPN Transistor isc Silicon NPN Power Transistor
2SD1158
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·High DC Current Gain-
: hFE= 250V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Rel |
INCHANGE |
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2SD1158 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High speed switching ·High DC current gain ·Low collector saturation voltag |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |