डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1157 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
2SD1157
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·High DC Current Gain-
: hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High R |
Inchange Semiconductor |
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2SD1159 | NPN Transistor | INCHANGE |
|
2SD1158 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1153 | NPN TRANSISTOR | Sanyo Semicon Device |
|
2SD1158 | NPN Transistor | INCHANGE |
|
2SD1151 | Si NPN triple diffused planar Transistor | ETC |
|
2SD1159 | NPN TRANSISTOR | Sanyo Semicon Device |
|
2SD1154 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD1159 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1157 | Silicon NPN Power Transistor | Inchange Semiconductor |
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