डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1154 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliab |
Inchange Semiconductor |
|
2SD1159 | NPN Transistor | INCHANGE |
|
2SD1158 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1153 | NPN TRANSISTOR | Sanyo Semicon Device |
|
2SD1158 | NPN Transistor | INCHANGE |
|
2SD1151 | Si NPN triple diffused planar Transistor | ETC |
|
2SD1159 | NPN TRANSISTOR | Sanyo Semicon Device |
|
2SD1154 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD1159 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1157 | Silicon NPN Power Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |