डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1141 | Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min)@IC= 4A ·Minimum Lot-to-Lot variations for robust d |
Inchange Semiconductor |
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2SD1141 | Power Transistor | Inchange Semiconductor |
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2SD1148 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1140 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SD1148 | NPN Transistor | Toshiba |
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2SD114 | NPN Transistor | INCHANGE |
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2SD1149 | NPN TRANSISTOR | Panasonic Semiconductor |
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2SD1145 | NPN TRANSISTOR | Sanyo Semicon Device |
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2SD1143 | NPN Transistor | INCHANGE |
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2SD1148 | NPN Transistor | INCHANGE |
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2SD1142 | NPN Transistor | INCHANGE |
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