2SD114 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit:

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 4A ·Minimum Lot-to-Lot variations for robust d

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1142 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A ·Built-in Da

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1143 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5A ·Built-in Damp

Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com 2SD1145 High-Current Driver Applications Applications · Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converter

: 2SD1148 T SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 159MAX. J#3