डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1136 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1136
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DESCRIPTION ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min)
APPLICATI |
SavantIC |
|
2SD1136 | Silicon NPN Transistor 2SD1136
Silicon NPN Triple Diffused
Application
Power switching TV horizontal deflection output
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SD1136
Absolute Maximum Ratings (Ta = 25°C)
|
Hitachi |
|
2SD1136 | NPN Transistor isc Silicon NPN Power Transistor
2SD1136
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance an |
INCHANGE |
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