2SD113 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device pe

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Ma

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1133 2SD1134 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low freq

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB ADE-208-905 (Z) 1st. Edition September 2000 1 23 Absolute Max

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 ·Minimum

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Ma

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1133 2SD1134 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB857/858 APPLICATIONS ·For low freq