2SD1126 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD1126 | NPN TRANSISTOR 2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3
1
2 3
2SD1126(K)
Absolute Maximum Rating |
 Hitachi Semiconductor |
|
| 2SD1126 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
2SD1126
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage ·Minimum |
 Inchange Semiconductor |
|
| 2SD1126 | Silicon NPN Transistor 2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
1 23
ADE-208-904 (Z) 1st. Edition
September 2000
1. Base 2. Collector
(Flange) 3. Emitter
2
1 ID
1.5 kΩ (Typ)
130 � |
 Renesas |
|
| 2SD1126K | NPN TRANSISTOR 2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3
1
2 3
2SD1126(K)
Absolute Maximum Rating |
Hitachi Semiconductor |
|
| 2SD1126K | Silicon NPN Transistor 2SD1126(K)
Silicon NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
1 23
ADE-208-904 (Z) 1st. Edition
September 2000
1. Base 2. Collector
(Flange) 3. Emitter
2
1 ID
1.5 kΩ (Typ)
130 � |
Renesas |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |