डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1118 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
2SD1118
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·High DC Current Gain-
: hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Rel |
Inchange Semiconductor |
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2SD111 | Silicon NPN Power Transistor | INCHANGE |
|
2SD1111 | NPN TRANSISTOR | Sanyo Semicon Device |
|
2SD1113K | Silicon NPN Transistor | Renesas |
|
2SD1115K | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD1113 | NPN TRANSISTOR | Hitachi Semiconductor |
|
2SD1110 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1113K | NPN TRANSISTOR | Hitachi Semiconductor |
|
2SD1117 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SD1119 | NPN TRANSISTOR | Panasonic Semiconductor |
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2SD1113 | Silicon NPN Transistor | Renesas |
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