डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1117 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
2SD1117
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe O |
Inchange Semiconductor |
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2SD111 | Silicon NPN Power Transistor | INCHANGE |
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2SD1111 | NPN TRANSISTOR | Sanyo Semicon Device |
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2SD1113K | Silicon NPN Transistor | Renesas |
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2SD1115K | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD1113 | NPN TRANSISTOR | Hitachi Semiconductor |
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2SD1113K | NPN TRANSISTOR | Hitachi Semiconductor |
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2SD1117 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SD1110 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1119 | NPN TRANSISTOR | Panasonic Semiconductor |
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2SD1118 | Silicon NPN Power Transistor | Inchange Semiconductor |
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