डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1115 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
|
2SD1115 | Silicon NPN Transistor 2SD1115(K)
Silicon NPN Triple Diffused
www.DataSheet4U.com
Application
High voltage switching, igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
4.5 kΩ (Typ)
250 Ω (Typ) 3 |
Hitachi Semiconductor |
|
2SD1115K | Silicon NPN Transistor 2SD1115(K)
Silicon NPN Triple Diffused
www.DataSheet4U.com
Application
High voltage switching, igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
4.5 kΩ (Typ)
250 Ω (Typ) 3 |
Hitachi Semiconductor |
|
2SD1115K | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1115K
www.datasheet4u.com
DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor |
SavantIC |
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