2SD1113 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD1113 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 4A ·Minimum |
 Inchange Semiconductor |
|
| 2SD1113 | NPN TRANSISTOR 2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Co |
 Hitachi Semiconductor |
|
| 2SD1113 | Silicon NPN Transistor To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitach |
 Renesas |
|
| 2SD1113K | NPN TRANSISTOR 2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Co |
Hitachi Semiconductor |
|
| 2SD1113K | Silicon NPN Transistor To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitach |
Renesas |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |