डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD111 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable oper |
INCHANGE |
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2SD1110 | NPN Transistor isc Silicon NPN Power Transistor
2SD1110
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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2SD1110 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1110
www.datasheet4u.com
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATI |
SavantIC |
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2SD1111 | NPN TRANSISTOR Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
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Sanyo Semicon Device |
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2SD1113 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 4A ·Minimum |
Inchange Semiconductor |
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2SD1113 | NPN TRANSISTOR 2SD1113(K)
Silicon NPN Triple Diffused
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
6 kΩ (Typ)
450 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Co |
Hitachi Semiconductor |
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2SD1113 | Silicon NPN Transistor To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitach |
Renesas |
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