डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1088 | NPN Transistor SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=2000(Min.) (Vce=2V, Ic=2A)
INDUS 1K1AL AMPLICATIONS Unit in |
Toshiba |
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2SD1088 | High Voltage Darlington Power Transistors High Voltage Darlington Power Transistors
FEATURES
Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min).
Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA.
High DC Current Gai |
GME |
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2SD1088 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD1088
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min) ·High DC Current Gain-
: hFE= 2000(Min.)@IC= 2A ·Low Collector-Emitter Saturati |
INCHANGE |
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2SD1088 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1088
www.datasheet4u.com
DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching ign |
SavantIC |
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