2SD108 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD108 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD108
DESCRIPTION ·High DC current gain-
: hFE = 2000 (Min) @ IC = 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=80V(Min) ·Mini |
 INCHANGE |
|
| 2SD1083 | NPN Transistor www.DataSheet4U.com
|
 ETC |
|
| 2SD1085 | Silicon NPN Transistor 2SD1085(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2
1
4.5 kΩ 250 Ω (Typ) (Typ)
3
Absolute Maximum Ratings |
 Hitachi |
|
| 2SD1085K | Silicon NPN Transistor 2SD1085(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2
1
4.5 kΩ 250 Ω (Typ) (Typ)
3
Absolute Maximum Ratings |
Hitachi |
|
| 2SD1087 | Silicon NPN Triple Diffused Darlington Power Transistor www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
 Toshiba |
|
| 2SD1088 | NPN Transistor SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=2000(Min.) (Vce=2V, Ic=2A)
INDUS 1K1AL AMPLICATIONS Unit in |
Toshiba |
|
| 2SD1088 | High Voltage Darlington Power Transistors High Voltage Darlington Power Transistors
FEATURES
Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min).
Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA.
High DC Current Gai |
 GME |
शेयर लिंक :
[1] [2]
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