डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1070 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1070
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to |
INCHANGE |
|
2SD1072 | Power Transistor | Fuji Electric |
|
2SD1073 | HIGH POWER DARLINGTON | Fuji Electric |
|
2SD1073 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD1071 | Silicon NPN Transistor | Inchange Semiconductor |
|
2SD1071 | NPN EPITAXIAL SILICON TRANSISTOR | Unisonic Technologies |
|
2SD1071 | POWER TRANSISTOR | Fuji |
|
2SD1072 | NPN Transistor | INCHANGE |
|
2SD1070 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |