डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD1031 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1031
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2. |
INCHANGE |
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2SD1031 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |