2SCR542D डाटा शीट PDF( Datasheet )

Midium Power Transistors (30V / 5A) 2SCR542D  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain hFE :200-500@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR) CEO= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance