2SC607 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com Ordering number : ENA0271 2SC6071 SANYO Semiconductors DATA SHEET 2SC6071 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers,

2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm ・High transition frequency: fT = 200 MHz (typ.) Abs

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-spee

isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.5V(Max) @IC= 1A ·Minimum Lot-to-Lot

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Power Switching Applications 2SC6076 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC =

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications • • Low collector saturation voltage: VCE (sat) = 0.5 V (max)�