डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC606 | NPN SILICON TRANSISTOR |
ETC |
|
2SC606 | PNP/NPN SILICON EPITAXIAL TRANSISTOR |
ETC |
|
2SC6060 | Transistor Silicon NPN Transistor 2SC6060
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6060
Power Amplifier Applications Driver Stage Amplifier Applications
・High-transition frequency: fT = 100 MHz (typ.) Unit: mm
Absolute Maximum Ratin |
Toshiba |
|
2SC6061 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6061
2SC6061
High-Speed Switching Applications DC-DC Converter Applications
・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)・ Low-collector-emitter sat |
Toshiba |
|
2SC6064 | NPN Epitaxial Planar Silicon Transistors Ordering number : ENA0270
2SC6064
2SC6064
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment. |
Sanyo Semicon Device |
|
2SC6065 | NPN Triple Diffused Planar Silicon Transistor Ordering number : EN8561
2SC6065
2SC6065
Features
• • • •
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage. High-speed switching. Wide ASO. Adop |
Sanyo Semicon Device |
|
2SC6067 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC6067
○ Medium Power Amplifier Applications ○ Strobe Flash Applications
2SC6067
Unit: mm
・ Low Saturation Voltage:
VCE (sat) = 0.3 V (max) (@ IC=3 |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |