डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC6026 | Silicon NPN Transistor 2SC6026
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
General-Purpose Amplifier Applications
• • • • •
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Unit: mm
0.15±0.05
High voltage and high current : |
Toshiba Semiconductor |
|
2SC6026CT | Silicon NPN Transistor 2SC6026CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC6026CT
General Purpose Amplifier Applications
High voltage and high current
: VCEO = 50V, IC = 100mA (max)
Excellent hFE line |
Toshiba |
|
2SC6026MFV | Silicon NPN Transistor 2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
• Excellent hFE l |
Toshiba Semiconductor |
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