डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC594 | SILICON NPN TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES
• High Transition Frequency : fx=200MHz (Typ-) • Lo |
Toshiba |
|
2SC5946 | NPN Transistor Transistors
2SC5946
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
0.33+–00..0025
0.10+–00..0025
■ Features
3
0.15 min.
0.80±0.05 1.20±0.05
• H |
Panasonic Semiconductor |
|
2SC5946G | Silicon NPN Transistor Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5946G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Package
• High |
Panasonic |
|
2SC5947 | NPN Triple Diffused Planar Silicon Transistor www.DataSheet4U.com
Ordering number : ENN7787
2SC5947
NPN Triple Diffused Planar Silicon Transistor
2SC5947
Switching Regulator Applications
Features
• • • • •
Package Dimensions
unit : mm 2069C
[ |
Sanyo Semicon Device |
|
2SC5948 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5948
2SC5948
Power Amplifier Applications
• Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage.
Unit: mm
Absolute Ma |
Toshiba |
|
2SC5949 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5949
2SC5949
Power Amplifier Applications
Unit: mm
• Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage.
Absolute M |
Toshiba Semiconductor |
|
2SC5949 | Silicon NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5949
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Complement to |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |