| No. | Partie # | Fabricant | Description | Fiche Technique |
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CEL |
NPN SILICON RF TRANSISTOR • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of g |
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NEC |
NPN SILICON RF TRANSISTOR |
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