| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
2SC5548 perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and ind |
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Toshiba |
2SC5548A ability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook |
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Toshiba Semiconductor |
NPN TRANSISTOR perating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and ind |
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Toshiba Semiconductor |
NPN Transistor in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabil |
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INCHANGE |
NPN Transistor d SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=1mA; IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage |
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INCHANGE |
NPN Transistor BVCBO Collector-Base Breakdown Voltage IC=1mA; IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.1A ICBO Coll |
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