2SC5359 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W hi

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applicat

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5359 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to