2SC5358 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications 2SC5358 Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W hig

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5358 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applic

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5358 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to