2SC5305 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage :V(BR)CBO= 1200V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

UNISONIC TECHNOLOGIES CO., LTD 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR  FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge L

Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process).