डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC5242 | Silicon NPN TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5242
Power Amplifier Applications
2SC5242
Unit: mm
• High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro |
Toshiba Semiconductor |
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2SC5242 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5242
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(M |
SavantIC |
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2SC5242 | NPN Transistor isc Silicon NPN Power Transistor
2SC5242
DESCRIPTION ·High Collector Breakdown Voltage-
: V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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2SC5242 | NPN Epitaxial Silicon Transistor 2SC5242/FJA4313
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A • High Power Dissipati |
Fairchild Semiconductor |
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