2SC524 डाटा शीट PDF( Datasheet )

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC524, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V (2SC5

SHINDENGEN Switching Power Transistor FX Series 2SC5241 5A NPN OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5241 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching re

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device pe

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5242 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(M

isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 ·Minimum Lot-to-Lot variations for robust