डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC5201 | NPN TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (ma |
Toshiba Semiconductor |
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2SC5200 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SC5200 | NPN Transistor | STMicroelectronics |
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2SC5200 | 150 Watt Silicon NPN Power Transistors | Thinki Semiconductor |
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2SC5200 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
|
2SC5200B | Silicon NPN Transistor | JILIN SINO |
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2SC5200A | Silicon NPN Transistor | JILIN SINO |
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2SC5200 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
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2SC5207A | NPN TRANSISTOR | Hitachi Semiconductor |
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2SC5200 | NPN Transistor | INCHANGE |
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2SC520A | (2SC519A - 2SC521A) Silicon NPN Triple Diffused Mesa Transistor | ETC |
www.DataSheet.in | 2017 | संपर्क |