2SC5199 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use in 80

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applicat

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5199 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to