2SC5198 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70

NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=140V (min) Complementary to 2SA1941 Recomme

2SC5198 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-3P Plastic Package.  特征 / Features 用于 70W 高保真音频功率�

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5198 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applic

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 ·Minimum Lot-to-Lot variations for robust de

SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES High breakdown voltage