2SC506 डाटा शीट PDF( Datasheet )

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2S

2SC5060 Transistors Power transistor (90±10V, 3A) 2SC5060 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power su

www.DataSheet4U.com www.DataSheet4U.com

Power Transistors 2SC5063 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q q 1.5max.

SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High-speed switching High collector to base voltage VCBO +0.15 1.50 -0.15 6.50 +

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolu

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5064 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz ·100% avalanche tested ·Minimum Lot-to-Lo