डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SC503 | Silicon NPN Epitaxial Type Transistor w
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Toshiba |
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2SC5030 | NPN TRANSISTOR 2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = |
Toshiba Semiconductor |
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2SC5032 | NPN TRANSISTOR Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Sol |
Panasonic Semiconductor |
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2SC5034 | NPN Transistor Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
9.9±0.3 φ3.2±0.1
2.9±0.2
q High collector to emitter VC |
Panasonic Semiconductor |
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2SC5035 | NPN TRANSISTOR Power Transistors
2SC5035
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q q
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
4.1±0.2 8.0±0.2 Solder |
Panasonic Semiconductor |
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2SC5036 | NPN TRANSISTOR Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q q q
4.1±0.2 8.0± |
Panasonic Semiconductor |
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2SC5036A | NPN TRANSISTOR Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q q q
4.1±0.2 8.0± |
Panasonic Semiconductor |
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