2SC4706 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device perfor

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25°C

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching reg