2SC4655 डाटा शीट PDF( Datasheet )

Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 s Features q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 Optimum for RF amplification, oscillati

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplification ■ Features ■ Package • Optimum for RF amplific

Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification, oscillation, mixing, and IF of 1.60+–00..0035 1.00±0.05 3 0.80±0.05