2SC4180 डाटा शीट PDF( Datasheet )

Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  High voltage and current.  Power dissipation PC=150mW.  Small package. Pb Lead-free Production specification 2SC4180 APPLI

SMD Type NPN Silicon Epitaxial Transistor 2SC4180 Features Small dimension High DC current gain Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Coll

2 SC4180 TRANSISTOR (NPN) FEATURES  High DC Current Gain APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter C

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Excellent hFE linearity. High voltage and current. Power dissipation PC=150mW. Small package. Production specification 2SC4180W Pb Le