2SC4102 डाटा शीट PDF( Datasheet )

Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102 APPLICATIONS  NPN Silicon Epitaxial Planar Transist

2SC4102 / 2SC3906K High-voltage Amplifier Transistor (120V, 50mA) Datasheet Parameter VCEO IC Value 120V 50mA lFeatures 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K. lOutline S

SMD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Co

2SC4102 TRANSISTOR (NPN) FEATURES  High Breakdown Voltage  Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Volt

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial